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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3719 description high collector-emitter breakdown voltage- : v (br)ceo = 800v (min) high switching speed wide area of safe operation applications designed for high speed switching and horizontal deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 1200 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 5 a i cm collector current-peak 8 a i b b base current-continuous 3 a p c collector power dissipation @t c =25 150 w t j junction temperature 175 t stg storage temperature range -65~175 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3719 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 800 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.4a b 1.5 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 0.4a b 2.0 v h fe dc current gain i c = 2a; v ce = 5v 6 20 i cbo collector cutoff current v cb = 1000v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 6v; i c = 0 0.1 ma switching times t on turn-on time 1.0 s t stg storage time 3.5 s t f fall time i c = 2a; i b1 = 0.4a; i b2 = -0.8a; v cc = 250v 0.3 s isc website www.iscsemi.cn |
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